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NTHD4P02F Power MOSFET and Schottky Diode
-20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt
Features http://onsemi.com MOSFET
V(BR)DSS -20 V RDS(on) TYP -130 mW @ -4.5 V 200 mW @ -2.5 V ID MAX -3.0 A
* Leadless SMD Package Featuring a MOSFET and Schottky Diode * 40% Smaller than TSOP-6 Package with Similar Thermal * * * * * * *
Characteristics Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky Pb-Free Package is Available
SCHOTTKY DIODE
VR MAX 20 V S VF TYP 0.510 V A IF MAX 3.0 A
Applications
Li-Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products
G V V A A A W
MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Steady State tv5s Pulsed Drain Current Power Dissipation TJ = 25C TJ = 85C TJ = 25C ID IDM PD Symbol VDSS VGS ID Value -20 12 -2.2 -1.6 -3.0 -9.0 1.1 0.6 2.1 IS TJ, TSTG TL -2.1 -55 to 150 260 A C C Units
D P-Channel MOSFET
C SCHOTTKY DIODE ChipFET CASE 1206A STYLE 3
tp = 10 ms Steady State tv5s TJ = 25C TJ = 85C TJ = 25C
PIN CONNECTIONS
1 8
MARKING DIAGRAM
1 2 3 4 C3 M G 8 7 6 5
A
2 7
C C
6
Continuous Source Current (Body Diode) Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
A S
3
D D
4 5
G
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Steady State tv5s TJ = 25C 3.0 A Symbol VRRM VR IF Value 20 20 2.2 Units V V A C3 = Specific Device Code M = Month Code G = Pb-Free Package
ORDERING INFORMATION
Device NTHD4P02FT1 NTHD4P02FT1G Package ChipFET ChipFET (Pb-free) Shipping 3000/Tape & Reel 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHD4P02F/D
(c) Semiconductor Components Industries, LLC, 2005
1
November, 2005 - Rev. 7
NTHD4P02F
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (Note 1) Steady State tv5s TJ = 25C Symbol RqJA Max 110 60 Units C/W
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On- Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -16 V, ID = -2.2 A, RG = 2.5 W 7.0 13 33 27 12 25 50 40 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -2.2 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 185 95 30 3.0 0.2 0.5 0.9 300 150 50 6.0 nC pF VGS(TH) RDS(on) gFS VGS = VDS, ID = -250 mA VGS = -4.5, ID = -2.2 A VGS = -2.5, ID = -1.7 A VDS = -10 V, ID = -1.7 A -0.6 -0.75 0.130 0.200 5.0 -1.2 0.155 0.240 S V W V(BR)DSS IDSS IGSS VGS = 0 V, ID = -250 mA VDS = -16 V, VGS = 0 V, TJ = 25C VDS = -16 V, VGS = 0 V, TJ = 85C VDS = 0 V, VGS = 12 V -20 -23 -1.0 -5.0 100 nA V mA Symbol Test Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = -2.1 A , dIS/dt = 100 A/ms VGS = 0 V, IS = -2.1 A -0.85 32 10 22 15 nC -1.15 V ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 0.5 A IF = 1.0 A Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change Non-Repetitive Peak Surge Current IR dv/dt IFSM VR = 10 V VR = 20 V VR = 20 V Halfwave, Single Pulse, 60 Hz 10,000 23 Min Typ 0.425 0.480 0.510 0.575 1.0 5.0 V/ns A mA Max Units V
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
4 -ID, DRAIN CURRENT (AMPS) VGS = -6 V to -3 V VGS = -2.4 V -2.2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -2 V 4 VDS -10 V 3
3 -1.8 V 2 -1.6 V 1 -1.4 V -1.2 V 0 0 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2 TC = -55C 25C 0 0.5 100C 3
1
1 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 ID = -2.1 A TJ = 25C 0.25
Figure 2. Transfer Characteristics
TJ = 25C 0.225 VGS = -2.5 V 0.2 0.175 0.15 VGS = -4.5 V 0.125 0.1 0.5 1.5 2.5 3.5 -ID, DRAIN CURRENT (AMPS)
0.4
0.3
0.2
0.1 0 1 2 3 4 5 6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -2.1 A VGS = -4.5 V -IDSS, LEAKAGE (A) 1.4 1000 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
1.2
1
100
TJ = 100C
0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 -TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
-VGS, GATE-TO-SOURCE VOLTAGE (V) 600 VDS = 0 V 500 C, CAPACITANCE (pF) 400 300 200 100 0 10 5 -VGS 0 -VDS 5 10 15 20 COSS CRSS CISS VGS = 0 V TJ = 25C -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5 QT 4 -VDS -VGS 12 15
3 QGS 2 QGD
9
6
1
ID = -2.1 A TJ = 25C 0 1 2 3 4
3
0
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -2.1 A VGS = -4.5 V 100 t, TIME (ns) td(OFF) tf 10 td(ON) tr 2.5
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C 2
1.5
1
0.5 0 0.3
1 1 10 RG, GATE RESISTANCE (W) 100
0.5
0.7
0.9
-VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 1.0E-02 1.0E-01 1.0E+00 t, TIME (s)
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
0.1
Normalized to qja at 10s.
Chip
0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
Ambient 1.0E+03
0.01 1.0E-03
1.0E+01
1.0E+02
Figure 11. Thermal Response
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NTHD4P02F
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1
TJ = 150C
1
TJ = 150C
TJ = 25C TJ = -55C 0.40 0.60 0.80
TJ = 25C 0.40 0.60 0.80
0.1 0.20
0.1 0.20
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 12. Typical Forward Voltage
1E-3 IR, REVERSE CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) 1.0E+1
Figure 13. Maximum Forward Voltage
TJ = 150C
1.0E+0 1.0E-1 1.0E-2 1.0E-3
TJ = 150C
100E-6 TJ = 100C 10E-6
TJ = 100C
1E-6
1.0E-4 1.0E-5 TJ = 25C 0 10 VR, REVERSE VOLTAGE (VOLTS) 20
100E-9 10E-9 0
TJ = 25C
1.0E-6
1.0E-7
10 VR, REVERSE VOLTAGE (VOLTS)
20
Figure 14. Typical Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
Figure 15. Maximum Reverse Current
IO, AVERAGE FORWARD CURRENT (AMPS)
3.5 freq = 20 kHz 3 2.5 2 1.5 1 0.5 0 25 dc square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 dc
45
65
85
105
125
145
165
TL, LEAD TEMPERATURE (C)
Figure 16. Current Derating
Figure 17. Forward Power Dissipation
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NTHD4P02F
SOLDERING FOOTPRINT*
2.032 0.08 0.457 0.018 0.635 0.025 2.032 0.08
0.711 0.028
1.092 0.043
0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026
SCALE 20:1 mm inches
0.66 0.026
0.254 0.010
SCALE 20:1 mm inches
Figure 18. Basic
Figure 19. Style 3
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS The basic pad layout with dimensions is shown in Figure 18. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. The minimum recommended pad pattern shown in Figure 19 improves the thermal area of the drain connections (pins 5, 6) while remaining within the confines of the basic footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq. mm). This will assist the power dissipation path away from the device (through the copper lead-frame) and into the board and exterior chassis (if applicable) for the single device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further.
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NTHD4P02F
PACKAGE DIMENSIONS
ChipFET] CASE 1206A-03 ISSUE G
D
8 7 6 5
q L
5 6 3 7 2 8 1
HE
1 2 3 4
E
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. A A S G D D C C MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5 NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5 NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067
e1 e
b
c
A 0.05 (0.002)
0.017 0.079
ChipFET is a trademark of Vishay Siliconix.
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PUBLICATION ORDERING INFORMATION
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NTHD4P02F/D

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